production specification schottky barrier diode b a t 5 4 h fea t ures z low for w ard volt age 0.35v olt s (t yp.). pb lead -free @i f =10ma. z extremely fast switching speed. z ultra-small surface mount p a ckage. z pn junction guar d ring fo r tr ansient and esd protection. applica t ions sod- 323 z schottky barrier detec tor and switching diodes. ordering informa t ion t y pe no. marking packag e code b a t 5 4 h j v s o d - 3 2 3 maximum ra ting @ t a =25 unless oth e rwise specified parameter s y mbol limits unit dc reverse voltage v r 30 v forwar d continuous cur r e n t i f 200 ma repetitive pe ak forward curr ent i frm 300 ma forwar d sur ge cur r ent @t<1.0s i fsm 600 ma power dissipation p d 200 mw thermal resistance,junction to ambien t air r ja 635 /w junction temperatur e t j 150 storage temperatur e ran ge t stg -65- 150 electrical characteristics @ t a =25 unless otherwise specified silikron semiconductor co.,ltd. 1 http://www.silikron.com v1.0
production specification schottky barrier diode b a t 5 4 h parameter s y mbol conditions min. ty p . max. unit reverse bre a kdown voltage v (br)r i r =10 a 30 v v f1 i f =0.1ma 0.22 0.24 v v f2 i f =1.0ma 0.29 0.32 v forwar d volt age v f3 i f =10ma 0.35 0.40 v v f4 i f =30ma 0.41 0.5 v v f5 i f =100ma 0.52 0.8 v reverse leakage curre nt i r v r =25v 0.5 2.0 a reverse recover y time t rr i f =10ma,i r =1.0ma 5.0 ns total capacitance c t v r =1.0v ,f=1.0mhz 7.6 10 pf typical characteri s tics @ t a =25 unless otherwise specified silikron semiconductor co.,ltd. 2 http://www.silikron.com v1.0
production specifica t ion schottky barrier diode p a ckag e outli n e plastic surfa c e mounted p a ckage b a t 5 4 h sod-32 3 k e h d c b a j sod-323 dim min max a 1.275 1.325 b 1.675 1.725 c 0.9 t y pical d 0.25 0.35 e 0.27 0.37 h 0.02 0.1 j 0.1 t y pical k 2.6 2.7 all dimensio ns in mm soldering footprin t unit : mm p a ckag e info rma t io n device package shipping ba t54h sod-323 3000/t ape& reel silikron semiconductor co.,ltd. 3 http://www.silikron.com v1.0
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